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For a detailed description of ion implant model selection, see Chapter 3: “SSUPREM4 Models”, Section 3.5:“Ion Implantation Models”.

You can specify tilt and rotation angles of the ion beam. Positive tilt angles correspond to the ion beam coming from the top left. Specifying the rotation angle makes sense only for non-zero tilt angles. Zero rotation means that the ion beam vector lies in the plane parallel to the 2D simulation plane. 90° rotation means that the ion beam vector lies in the plane perpendicular to the simulation plane.

Selecting Continual rotation causes SSUPREM4 to rotate the wafer, i.e., implantation will be performed at 24 different rotation angles from 0 to 345°, in increments of 15°.

There are several damage models available in SSUPREM4. These models allow you to estimate distributions of various defects generated after ion implantation. For more details about the damage models and their effect on subsequent diffusion, see Chapter 3: “SSUPREM4 Models”, Section

7.7.6:“Ion Implantation Damage”.

When the Monte Carlo model is selected, you can specify several additional optional parameters (See Figure 7.36). The first three parameters are related to the Damage model (Point defects, {311}-clusters, and dislocation loops). The three others control Monte Carlo calculation (initial random number, number of trajectories, and smoothing). See Table 7.6 for a quick reference of ATHENA implant models.

Table 7.6. ATHENA Implant Model Reference

Process Model Assumption Recommendation
Implant SIMS Verified DualPearson (SVDP) - Default Empirical See Chapter 3: “SSUPREM4 Models”, Table 3-7.
Single Pearson Analytic All other cases
Monte CarloMonte or BCA Statistical Multi-layer structures: angled implants into a structure where many ions could be reflected (trenches); when channeling is not described by SVDP; high or very low energy
SiliconType Amorphous No channeling effect is included Most of implant profile is within amorphous materials (oxide, polysilicon, pre- amorphized silicon); channeling is negligible or not important
Crystal - Default Channeling effect is included When channeling effects are important: light ions (boron, phosphorus)_, zero or close to 0° tilt, implant through thin amorphous layer into crystalline substrate

Figure 7.36. ATHENA Implant Window continued on next page

Figure 7.36. ATHENA Implant Window

7.7.7 Simulating Diffusion

Simulation of thermal process steps is a focal point of SSUPREM4. The hierarchy of diffusion and oxidation models is described in this chapter and in Chapter 3: “SSUPREM4 Models”, Sections 3.1: “Diffusion Models” and 3.3: “Oxidation Models”. This section will demonstrate how to set different parameters and models of diffusion, oxidation and silicidation. The last process will take place only if at least one refractory metal or silicide layer is present in the structure.

The parameters and models of a diffusion/oxidation step can be prepared from the ATHENA Diffuse Menu. (Figure 7.37).

Figure 7.37. ATHENA Diffuse Menu.

To open this menu, select Process→Diffuse... in the Deckbuild Commands menu. The Diffuse menu has four sections. Only the Time/Temperature and Ambient fields appear initially. The Impurities and Models fields appear only when the corresponding check boxes are selected.

Questions & Answers

find the 15th term of the geometric sequince whose first is 18 and last term of 387
Jerwin Reply
I know this work
salma
The given of f(x=x-2. then what is the value of this f(3) 5f(x+1)
virgelyn Reply
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Abhi
how do they get the third part x = (32)5/4
kinnecy Reply
can someone help me with some logarithmic and exponential equations.
Jeffrey Reply
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ninjadapaul
20/(×-6^2)
Salomon
okay, so you have 6 raised to the power of 2. what is that part of your answer
ninjadapaul
I don't understand what the A with approx sign and the boxed x mean
ninjadapaul
it think it's written 20/(X-6)^2 so it's 20 divided by X-6 squared
Salomon
I'm not sure why it wrote it the other way
Salomon
I got X =-6
Salomon
ok. so take the square root of both sides, now you have plus or minus the square root of 20= x-6
ninjadapaul
oops. ignore that.
ninjadapaul
so you not have an equal sign anywhere in the original equation?
ninjadapaul
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Abhi
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Abhi
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salma
Commplementary angles
Idrissa Reply
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Sherica
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Uday
hi
salma
what is a good calculator for all algebra; would a Casio fx 260 work with all algebra equations? please name the cheapest, thanks.
Kevin Reply
a perfect square v²+2v+_
Dearan Reply
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Abdirahman Reply
algebra 2 Inequalities:If equation 2 = 0 it is an open set?
Kim Reply
or infinite solutions?
Kim
The answer is neither. The function, 2 = 0 cannot exist. Hence, the function is undefined.
Al
y=10×
Embra Reply
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Nancy Reply
rolling four fair dice and getting an even number an all four dice
ramon Reply
Kristine 2*2*2=8
Bridget Reply
Differences Between Laspeyres and Paasche Indices
Emedobi Reply
No. 7x -4y is simplified from 4x + (3y + 3x) -7y
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how do you translate this in Algebraic Expressions
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Need to simplify the expresin. 3/7 (x+y)-1/7 (x-1)=
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. After 3 months on a diet, Lisa had lost 12% of her original weight. She lost 21 pounds. What was Lisa's original weight?
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what's the easiest and fastest way to the synthesize AgNP?
Damian Reply
China
Cied
types of nano material
abeetha Reply
I start with an easy one. carbon nanotubes woven into a long filament like a string
Porter
many many of nanotubes
Porter
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Yasmin
what is the function of carbon nanotubes?
Cesar
I'm interested in nanotube
Uday
what is nanomaterials​ and their applications of sensors.
Ramkumar Reply
what is nano technology
Sravani Reply
what is system testing?
AMJAD
preparation of nanomaterial
Victor Reply
Yes, Nanotechnology has a very fast field of applications and their is always something new to do with it...
Himanshu Reply
good afternoon madam
AMJAD
what is system testing
AMJAD
what is the application of nanotechnology?
Stotaw
In this morden time nanotechnology used in many field . 1-Electronics-manufacturad IC ,RAM,MRAM,solar panel etc 2-Helth and Medical-Nanomedicine,Drug Dilivery for cancer treatment etc 3- Atomobile -MEMS, Coating on car etc. and may other field for details you can check at Google
Azam
anybody can imagine what will be happen after 100 years from now in nano tech world
Prasenjit
after 100 year this will be not nanotechnology maybe this technology name will be change . maybe aftet 100 year . we work on electron lable practically about its properties and behaviour by the different instruments
Azam
name doesn't matter , whatever it will be change... I'm taking about effect on circumstances of the microscopic world
Prasenjit
how hard could it be to apply nanotechnology against viral infections such HIV or Ebola?
Damian
silver nanoparticles could handle the job?
Damian
not now but maybe in future only AgNP maybe any other nanomaterials
Azam
Hello
Uday
I'm interested in Nanotube
Uday
this technology will not going on for the long time , so I'm thinking about femtotechnology 10^-15
Prasenjit
can nanotechnology change the direction of the face of the world
Prasenjit Reply
At high concentrations (>0.01 M), the relation between absorptivity coefficient and absorbance is no longer linear. This is due to the electrostatic interactions between the quantum dots in close proximity. If the concentration of the solution is high, another effect that is seen is the scattering of light from the large number of quantum dots. This assumption only works at low concentrations of the analyte. Presence of stray light.
Ali Reply
the Beer law works very well for dilute solutions but fails for very high concentrations. why?
bamidele Reply
how did you get the value of 2000N.What calculations are needed to arrive at it
Smarajit Reply
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Source:  OpenStax, Solid state physics and devices-the harbinger of third wave of civilization. OpenStax CNX. Sep 15, 2014 Download for free at http://legacy.cnx.org/content/col11170/1.89
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