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Table. study of 2147/INTEL(1977) and 6147/Hitachi(1978).

Product HMOS 4kStaticRAM Hi-CMOS4kSRAM
Technology NMOS Twin-well CMOS
Speed 55/70ns 55/70ns
I ACTIVE /I IDLE 110mA/15mA 15mA/1μA
Chip Size 16.2nm 2 11.5nm 2

The Table clearly states that Hitachi CMOS memory is several orders of magnitude better than INTEL’s NMOS memory as far as standby power dissipation is considered. By 1981, CMOS 16k SRAM was manufactured and sold.

Table gives the comparative study of microprocessor(μP) based on NMOS and CMOS.

Table study of 6801/HIT(79) and 6301/HIT(81)

Product 6801/HIT(79)8-bit μP 6301/HIT(81)8-bit μP
Technology 4-μmNMOS 3-μmCMOS
Speed 1MHz 1MHz,1.5MHz,2MHz
Power-Active 900mW 30mW(1MHz)
Stand-by Power 70mW 0.01mW
Pin Count 40Pins 40Pins

EPSON introduced all CMOS computer HX-20 in 1982. It was a hand-held computer and proto-type/ancestor of the present day nomadic tools. Gradually all products are shifting to CMOS Technology.

Presently Digital Consumer Market(smart phones and Tablet PCs) is driving Semiconductor Industries. In coming day, Automotive market, Robotics, Medfical&Health Care and Sensor Network Market will be driving the Semiconductor Market.

The processor speed has increased 10 times from Pentium in 1993 to Pentium III in 1999 but with the introduction of Core2Duo in 2006 to Corei7 in 2013 the core speed has increased 1.5 times only but the appetite for high speed computing is insatiable. So obviously this paradigm of core computing will not be able to keep up with the computing needs of the post-industrial era. So new computing paradigms will have to be invented.

Breahthrough in Strained Silcon and High-K,metal gate Technology has allowed Fabless Companies to follow the Road Map set by Moore’s Law. 3-D Tri-Gate Technology/Fin-FET Technology.

In 1991 a revolutionary 3D FinFET concept was put forward by Digh Hisamato and team of other researchers at Hitachi Central Research Laboratory. This proposed “WRAP AROUND” gate transistor technology. In conventional Planar Technology, GATE exercises control on the 2-D channel of electrons/holes only from the TOP.This new technology allowed the gate to exercise its control from 3 directions: From the TOP as well as from the TWO SIDES as shown in the Figure 2.19.

In Figure 2.19, the channel widths of Planar Transistor and Fin-FET are defined. In Figure 2.20 the channel length is defined in Fin-FET. The current drive capability and performance is directly proportional to its effective channel width as seen from the four Equations below:

The channel width can be significantly enhanced in 3-D Transistor structure in relation to planar structure because of the ability to extend the the width in the third dimension without increasing the layout area. This provides the potential for both enhanced design flecxibility for the designer as well as increased performance withput the same penality in 2-D area which exists when enhancing the width in planar transistor.

There is reduced active and leakage power in 3D Fin-FET transistors. This advantage results from the improved control of the channel by Gate’s electric field from the three sides of the Fin as shown in the figures. This results in a steeper curve of I D -V GS for Fin-FET as shown in Figure 2.21.The steeper curve results in significant reduction in leakage current in Fin-FET for the same performance of planar transistor or substantially higher performance in terms of operating speed or a combination of both.

Questions & Answers

can someone help me with some logarithmic and exponential equations.
Jeffrey Reply
sure. what is your question?
okay, so you have 6 raised to the power of 2. what is that part of your answer
I don't understand what the A with approx sign and the boxed x mean
it think it's written 20/(X-6)^2 so it's 20 divided by X-6 squared
I'm not sure why it wrote it the other way
I got X =-6
ok. so take the square root of both sides, now you have plus or minus the square root of 20= x-6
oops. ignore that.
so you not have an equal sign anywhere in the original equation?
Commplementary angles
Idrissa Reply
im all ears I need to learn
right! what he said ⤴⤴⤴
what is a good calculator for all algebra; would a Casio fx 260 work with all algebra equations? please name the cheapest, thanks.
Kevin Reply
a perfect square v²+2v+_
Dearan Reply
kkk nice
Abdirahman Reply
algebra 2 Inequalities:If equation 2 = 0 it is an open set?
Kim Reply
or infinite solutions?
The answer is neither. The function, 2 = 0 cannot exist. Hence, the function is undefined.
Embra Reply
if |A| not equal to 0 and order of A is n prove that adj (adj A = |A|
Nancy Reply
rolling four fair dice and getting an even number an all four dice
ramon Reply
Kristine 2*2*2=8
Bridget Reply
Differences Between Laspeyres and Paasche Indices
Emedobi Reply
No. 7x -4y is simplified from 4x + (3y + 3x) -7y
Mary Reply
is it 3×y ?
Joan Reply
J, combine like terms 7x-4y
Bridget Reply
im not good at math so would this help me
Rachael Reply
I'm not good at math so would you help me
what is the problem that i will help you to self with?
how do you translate this in Algebraic Expressions
linda Reply
Need to simplify the expresin. 3/7 (x+y)-1/7 (x-1)=
Crystal Reply
. After 3 months on a diet, Lisa had lost 12% of her original weight. She lost 21 pounds. What was Lisa's original weight?
Chris Reply
what's the easiest and fastest way to the synthesize AgNP?
Damian Reply
types of nano material
abeetha Reply
I start with an easy one. carbon nanotubes woven into a long filament like a string
many many of nanotubes
what is the k.e before it land
what is the function of carbon nanotubes?
what is nanomaterials​ and their applications of sensors.
Ramkumar Reply
what is nano technology
Sravani Reply
what is system testing?
preparation of nanomaterial
Victor Reply
Yes, Nanotechnology has a very fast field of applications and their is always something new to do with it...
Himanshu Reply
good afternoon madam
what is system testing
what is the application of nanotechnology?
In this morden time nanotechnology used in many field . 1-Electronics-manufacturad IC ,RAM,MRAM,solar panel etc 2-Helth and Medical-Nanomedicine,Drug Dilivery for cancer treatment etc 3- Atomobile -MEMS, Coating on car etc. and may other field for details you can check at Google
anybody can imagine what will be happen after 100 years from now in nano tech world
after 100 year this will be not nanotechnology maybe this technology name will be change . maybe aftet 100 year . we work on electron lable practically about its properties and behaviour by the different instruments
name doesn't matter , whatever it will be change... I'm taking about effect on circumstances of the microscopic world
how hard could it be to apply nanotechnology against viral infections such HIV or Ebola?
silver nanoparticles could handle the job?
not now but maybe in future only AgNP maybe any other nanomaterials
can nanotechnology change the direction of the face of the world
Prasenjit Reply
At high concentrations (>0.01 M), the relation between absorptivity coefficient and absorbance is no longer linear. This is due to the electrostatic interactions between the quantum dots in close proximity. If the concentration of the solution is high, another effect that is seen is the scattering of light from the large number of quantum dots. This assumption only works at low concentrations of the analyte. Presence of stray light.
Ali Reply
the Beer law works very well for dilute solutions but fails for very high concentrations. why?
bamidele Reply
how did you get the value of 2000N.What calculations are needed to arrive at it
Smarajit Reply
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Source:  OpenStax, Solid state physics and devices-the harbinger of third wave of civilization. OpenStax CNX. Sep 15, 2014 Download for free at http://legacy.cnx.org/content/col11170/1.89
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