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Table 3.1.The Ternary Alloys (GaAs (1-x) P x ) used in the manufacture of the whole range of spectrum coloured LED. Here E g =1.424+1.15x+0.176x 2 .

Colour Wavelength(μm) Energy Band-gap(eV) ‘x’ Substrate
Red 0.64 1.9 0.4 GaAs
Orange 0.62 2 0.5 GaP
Yellow 0.58 2.15 0.58 GaP
Green 0.55 2.25 0.656 GaP
Blue 0.475 2.60 0.9 SiC

3.1.1. The Crystal Structure of Compound Semiconductors and its Dopent.

GaP, GaAs, GaSb, InAs, InSb , InP , AlAs, and AlSb have the the same crystalline structure as Diamond but now it is called Zinc-Blende. It is two interpenetrating FCC sublattices with one sublattice made of Group III element and the other FCC sublattice made of Group V element and one sub-lattice is displaced with respect to the other along the diagonal of the cube by a quarter of the diagonal length i.e. by a√3/4. The net result is that every Group III has FOUR Group V atoms as neighbours and similarly Group V has for Group III atoms as neighbours. This completes the co-valent bond requirement.

Table 3.2 tabulates the dopents of III-V Compound semiconductors.

Table 3.2. P and N type dopents for III-V Compunds.

Group II III IV V VI
Zn Ga Si As S
In Ge P Se
N
Acceptor Amphoteric Dopents Donors

Silicon and Germanium can either be Donor or Acceptor depending upon what they substitute. If Group III is substitute then they become DONOR and if they substitute Group V then they become acceptor. But since Si is smaller in size hence energetically it is favourable to replace Ga hence Si is Donor in GaAs and bigger Ge substitutes the bigger As atoms hence Ge is acceptor.

3.1.2. Band-gap Engineering.

The manipulation of Band Structure required for different kinds of applications is Band-gap Engineering. There are three techniques of Band-gap Enginering:

  1. Alloying;
  2. Use of Heterojunctions and
  3. Built-in strain via mismatched epitaxy.

The Aim of Band-gap Engineering is to tailor/customize the band-gap according to the wavelength at which we want to operate.

The second objective is to tailor the lattice constant according to our matching or our mis-matching requirements.

The wide miscibility range allows alloys to be grown with Band structures adjusted and finally tuned for specific applications.

3.1.3. Properties of Alloys.

In Alloys we have Lattice Parameter (a)Law called Vegard’s Law. If we have two solid mixture A X B (1-X) then the Alloy’s Lattice Parameter is given as follows:

Alloys are not perfect crystals even if they have perfect lattice structure. This because in solid mixture atoms donot have periodic placement.

By virtual crystal approximation:

We have quadratic approximation also:

Equation 3.3 is the same as the Equation given in Table 3.1.

Alloying induced dis-order causes a BOWING Parameter in compound semiconductor Wafer. Equations 3.2 and 3.3 are valid only if the alloy is a good mixture i.e. perfectly random mixing.

In an alloy A X B (1-X) a good mixing results into the fact that the probability that A is surrounded by B is (1-X) and B is surrounded by A is X. If proportion is different from the stichiometric corfficient then it is clustered or phase repeated.

Test of Eq (3.2):

AlAs has E g = 2.75eV and GaAs has E g = 1.43eV therefore in Al 0.3 Ga 0.7 As has

E g = 0.3×2.75+ 0.7×1.43 = 1.826eV.

Questions & Answers

Do somebody tell me a best nano engineering book for beginners?
s. Reply
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Devang Reply
are you nano engineer ?
s.
what is the Synthesis, properties,and applications of carbon nano chemistry
Abhijith Reply
so some one know about replacing silicon atom with phosphorous in semiconductors device?
s. Reply
Yeah, it is a pain to say the least. You basically have to heat the substarte up to around 1000 degrees celcius then pass phosphene gas over top of it, which is explosive and toxic by the way, under very low pressure.
Harper
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SUYASH Reply
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SUYASH
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s. Reply
of graphene you mean?
Ebrahim
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Ebrahim
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s.
Graphene has a hexagonal structure
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what's the easiest and fastest way to the synthesize AgNP?
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Cied
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abeetha Reply
I start with an easy one. carbon nanotubes woven into a long filament like a string
Porter
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Porter
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Uday
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Ramkumar Reply
what is nano technology
Sravani Reply
what is system testing?
AMJAD
preparation of nanomaterial
Victor Reply
Yes, Nanotechnology has a very fast field of applications and their is always something new to do with it...
Himanshu Reply
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AMJAD
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AMJAD
what is the application of nanotechnology?
Stotaw
In this morden time nanotechnology used in many field . 1-Electronics-manufacturad IC ,RAM,MRAM,solar panel etc 2-Helth and Medical-Nanomedicine,Drug Dilivery for cancer treatment etc 3- Atomobile -MEMS, Coating on car etc. and may other field for details you can check at Google
Azam
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Prasenjit
after 100 year this will be not nanotechnology maybe this technology name will be change . maybe aftet 100 year . we work on electron lable practically about its properties and behaviour by the different instruments
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name doesn't matter , whatever it will be change... I'm taking about effect on circumstances of the microscopic world
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silver nanoparticles could handle the job?
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I'm interested in Nanotube
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this technology will not going on for the long time , so I'm thinking about femtotechnology 10^-15
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Prasenjit Reply
At high concentrations (>0.01 M), the relation between absorptivity coefficient and absorbance is no longer linear. This is due to the electrostatic interactions between the quantum dots in close proximity. If the concentration of the solution is high, another effect that is seen is the scattering of light from the large number of quantum dots. This assumption only works at low concentrations of the analyte. Presence of stray light.
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Source:  OpenStax, Electrical and electronic materials science. OpenStax CNX. May 01, 2014 Download for free at http://cnx.org/content/col11615/1.14
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